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iv2q12017t4z – 1200v 17mω gen2 automotive sic mosfet


features


2
nd generation sic mosfet technology with


+18v gate drive


high blocking voltage with low on-resistance


high speed switching with low capacitance


high operating junction temperature capability


very fast&robust intrinsic body diode


kelvin gate input easing driver circuit design


applications


ev motor drivers


solar inverters


high voltage dc/dc converters


switch mode power supplies

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     推薦關(guān)鍵詞： IGBT模塊, IGBT單管, 晶閘管模塊, IGBT驅(qū)動(dòng), 風(fēng)機(jī)